New model for ``stretched exponential`` relaxation

Conference · Tue Dec 31 00:00:00 EST 1996

OSTI ID:527683

Walle, C.G. van de ^[1]

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1. Xerox Palo Alto Research Center, CA (United States)

A new model to explain stretched exponential relaxation in hydrogenated amorphous silicon is presented. The model does not invoke statistical distributions; rather, it is based on a careful treatment of diffusion, including retrapping. Excellent fits to a variety of experimental data are obtained.

• OSTI ID: 527683
• Report Number(s): CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%111
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MICROSTRUCTURE
SILICON
MATHEMATICAL MODELS
DIFFERENTIAL EQUATIONS
ENERGY LEVELS
DIFFUSION
TRAPS
RELAXATION
TEMPERATURE DEPENDENCE
CORRELATIONS