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Title: Light induced degradation and structure of high efficiency a-Si:H, a-SiGe:H and a-SiC:H solar cells

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:5255490

The electrical and optical properties of a-Si:H, a-SiGe:H and a-SiC:H films prepared by d.c. glow discharge method have been characterized. High performance p-i-n devices have also been prepared. The relative stability as well as initial properties of these materials was examined as a function of growth rate. Notable solar cells include efficiencies of 9.36% for a-Si:H deposited at 10Asec, 8.6% for a-SiGe:H and 7% for a-SiC:H. Cells employing I-layers of a-Si:H grown at rates greater than 10Asec were significantly less stable than standard material. Cells using I-layers of either a-SiGe:H or a-SiC:H were stable (compared to standard a-Si:H) when they were prepared at growth rates of less than 1.0Asec. An increase in the infrared absorption at 845 cm/sup -1/ was associated with an increase in the rate of light induced degradation. Absorption at 845 cm/sup -1/, is usually associated with the bending modes of (SiH/sub 2/)/sub n/ polymeric chains

Research Organization:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
OSTI ID:
5255490
Report Number(s):
CONF-870116-
Journal Information:
AIP Conf. Proc.; (United States), Vol. 157:1; Conference: International conference on stability of amorphous silicon alloy materials and devices, Palo Alto, CA, USA, 28 Jan 1987
Country of Publication:
United States
Language:
English