Microwave dielectric constants of silicon, gallium arsenide, and quartz

Journal Article · Wed Jun 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341153· OSTI ID:5253746

Seeger, K

For a determination of the dielectric constants epsilon of semiconductors, a microwave transmission interference method has been applied. For the first time, a calculation is presented which yields the full interference spectrum, not only the position of the extremal points. A comparison of the theoretical and experimental spectra results in a higher precision than previously obtained. A metal evaporation of the sample faces which are in contact with the waveguide walls turns out to be very important. Relative dielectric constants of 11.6 for silicon, 12.8 for gallium arsenide, and 4.6 for crystalline quartz, all +- 0.05, have been obtained.

• Research Organization: Ludwig Boltzmann Institut fuer Festkoerperphysik and Institut fuer Festkoerperphysik der Universitaet Wien, Kopernikusgasse 15, A-1060 Vienna, Austria
• OSTI ID: 5253746
• Journal Information: J. Appl. Phys.; (United States), Vol. 63:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
MICROWAVE RADIATION
PERMITTIVITY
DIELECTRIC PROPERTIES
ENERGY SPECTRA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
INTERFERENCE
QUARTZ
SILICON
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DATA
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
MATERIALS
MINERALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMIMETALS
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
360603* - Materials- Properties