Low temperature thin films formed from nanocrystal precursors
Patent
·
OSTI ID:5253435
Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5262357; A
- Application Number:
- PPN: US 7-796242
- OSTI ID:
- 5253435
- Resource Relation:
- Patent File Date: 22 Nov 1991
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low temperature thin films formed from nanocrystal precursors
Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo{endash}Si{endash}N/SiC thin films
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
Patent
·
Fri Jan 01 00:00:00 EST 1993
·
OSTI ID:5253435
Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo{endash}Si{endash}N/SiC thin films
Journal Article
·
Thu Jul 01 00:00:00 EDT 1999
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:5253435
+3 more
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
Journal Article
·
Fri Jul 15 00:00:00 EDT 2016
· Semiconductors
·
OSTI ID:5253435
+5 more