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Title: Gain and noise in very high gain avalanche photodiodes: Theory and experiment

Abstract

Large area silicon avalanche photodiodes (APDs) have been fabricated with maximum avalanche gains exceeding 10,000 and excellent signal to noise ratios. A model of device performance has been developed in which previously developed general expressions are numerically integrated using actual fabrication parameters. The gain, statistical fluctuations in the gain, electronic noise, and total peak broadening have been computed using this model. The results are in good agreement with measurements. The parameter k{sub eff} was found to be 7.2 {times} 10{sup {minus}4}, allowing a high signal to noise ratio at gains of several thousand.

Authors:
;  [1]
  1. Radiation Monitoring Devices, Inc., Watertown, MA (United States)
Publication Date:
OSTI Identifier:
524763
Report Number(s):
CONF-960848-
ISBN 0-8194-2247-9; TRN: 97:016753
Resource Type:
Book
Resource Relation:
Conference: Denver `96: 1. conference on space processing of materials, at SPIE International Society for Optical Engineering (SPIE) annual international symposium on optical science, engineering, and instrumentation, Denver, CO (United States), 4-9 Aug 1996; Other Information: PBD: 1996; Related Information: Is Part Of Hard x-ray/gamma-ray and neutron optics, sensors, and applications; Hoover, R.B.; Doty, F.P. [eds.]; PB: 331 p.; Proceedings/SPIE, Volume 2859
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; PHOTODIODES; TOWNSEND DISCHARGE; MATHEMATICAL MODELS; PERFORMANCE; GAIN; NOISE; COMPARATIVE EVALUATIONS; THEORETICAL DATA

Citation Formats

Redus, R, and Farrell, R. Gain and noise in very high gain avalanche photodiodes: Theory and experiment. United States: N. p., 1996. Web.
Redus, R, & Farrell, R. Gain and noise in very high gain avalanche photodiodes: Theory and experiment. United States.
Redus, R, and Farrell, R. 1996. "Gain and noise in very high gain avalanche photodiodes: Theory and experiment". United States.
@article{osti_524763,
title = {Gain and noise in very high gain avalanche photodiodes: Theory and experiment},
author = {Redus, R and Farrell, R},
abstractNote = {Large area silicon avalanche photodiodes (APDs) have been fabricated with maximum avalanche gains exceeding 10,000 and excellent signal to noise ratios. A model of device performance has been developed in which previously developed general expressions are numerically integrated using actual fabrication parameters. The gain, statistical fluctuations in the gain, electronic noise, and total peak broadening have been computed using this model. The results are in good agreement with measurements. The parameter k{sub eff} was found to be 7.2 {times} 10{sup {minus}4}, allowing a high signal to noise ratio at gains of several thousand.},
doi = {},
url = {https://www.osti.gov/biblio/524763}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}

Book:
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