Development and evaluation of an instrument for rapid electroreflectance of semiconductor materials. Final technical report, 1 February 1988-30 April 1989

Technical Report · Fri Jun 30 00:00:00 EDT 1989

OSTI ID:5234607

Herman, M H

The applications of electron-beam electroreflectance (EBER) to Hg(1-x)Cd(x)Te (MCT) and other semiconductor systems are desired. Temperature dependences of the E1 optical gap of MCT are in agreement with the results of other researchers. For an epitaxial sample, alpha E (1)/alpha T of -(6.7 to 8.2) x .0001 eV/K was obtained. This value is consistent with that determined by Berlouis. The author finds a larger thermal coefficient for epitaxial MCT on CdTe than for bulk MCT. He also measured the E(1) Delta (1) band gap to be nearly 0.63 eV above the E1 transition energy. MCT is more sensitive to electron beam current intensity than other materials due to its relatively poor thermal conductivity. The line shape observed at .001 A/sq.cm appears to be from thermoreflectance (TR), based upon calculations and detailed experimental studies. Therefore, EBER determinations of the temperature dependence of the E1 and E1+Delta (1) band gap energies demonstrate a large variance. The author has collaborated with other researchers on EBER evaluation of MCT growth and dry-etch processes. He has extended EBER studies to other technologically important crystal systems related to MCT. Correlations were found between the EBER measurements of CdTe samples and surface-preparation methods. In the case of GaAs and related compounds, results show promise in the analysis of epitaxial films and heterostructures, which are briefly described.

• Research Organization: Evans (Charles) and Associates, Redwood City, CA (USA)
• OSTI ID: 5234607
• Report Number(s): AD-A-211690/3/XAB; CEVANS-057/FR-8901
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
47 OTHER INSTRUMENTATION
CADMIUM TELLURIDES
ELECTRO-OPTICAL EFFECTS
MERCURY TELLURIDES
CRYSTALS
CURRENT DENSITY
ELECTRIC CURRENTS
ELECTRON BEAMS
ELECTRONS
ENERGY GAP
EPITAXY
ETCHING
EXPERIMENTAL DATA
FILMS
GALLIUM ARSENIDES
HETEROJUNCTIONS
PROGRESS REPORT
REFLECTION
SEMICONDUCTOR MATERIALS
SURFACES
THERMAL CONDUCTIVITY
VARIATIONS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CADMIUM COMPOUNDS
CHALCOGENIDES
CURRENTS
DATA
DOCUMENT TYPES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LEPTON BEAMS
LEPTONS
MATERIALS
MERCURY COMPOUNDS
NUMERICAL DATA
PARTICLE BEAMS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING
TELLURIDES
TELLURIUM COMPOUNDS
THERMODYNAMIC PROPERTIES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
440800 - Miscellaneous Instrumentation- (1990-)