Origin of the 1. 59-eV luminescence in ZnTe and the nature of the postrange defects from ion implantation

Journal Article · Thu Jul 01 00:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331394· OSTI ID:5196500

Norris, C B

We describe constituent-vapor heat-treatment experiments on ZnTe which indicate that the 1.59- eV luminescence in this material is V/sub Zn/ -related. The effects of Ga or I doping suggest further that the band is associated with some species of V/sub Zn/ -donor complex. This understanding of the 1.59- eV luminescence provides additional insight into our earlier study of postrange-defect introduction in ion-implanted ZnTe. The observed survival of the incumbent 1.59-eV band in the postrange zone is discussed in relation to the conclusion from earlier published studies that Zn/sub i/ are the dominant postrange defects in ZnTe. We conclude that Zn/sub i/ are not strongly involved in the observed postrange damage. To the contrary, our work gives some indication that V/sub Zn/ - and/or V/sub Te/ -related centers are formed in the postrange zone.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5196500
• Journal Information: J. Appl. Phys.; (United States), Vol. 53:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ZINC TELLURIDES
LUMINESCENCE
CRYSTAL DEFECTS
DAMAGE
DOPED MATERIALS
EXPERIMENTAL DATA
GALLIUM
HEAT TREATMENTS
IODINE
ION IMPLANTATION
MATHEMATICAL MODELS
RANGE
VAPORS
CHALCOGENIDES
CRYSTAL STRUCTURE
DATA
ELEMENTS
FLUIDS
GASES
HALOGENS
INFORMATION
MATERIALS
METALS
NONMETALS
NUMERICAL DATA
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
360603* - Materials- Properties