Silicon-on-insulator materials and devices
Silicon-on-insulator (SOI) has emerged during the past several years as the most promising approach to satisfying the increasingly demanding requirements for integrated circuits tolerant to total-dose X rays as well as to transient radiation pulses and high-energy particles. The basic mechanisms of radiation damage and circuit performance implications in SOI are similar in some respects to the effects in other integrated circuit technologies; however, there are several unique effects and device-related consequences that are available due to the thin silicon layers and buried oxide insulator used in the SOI device structure. The basic features of SOI materials and their fabrication, as well as the unique areas where radiation effects in SOI devices differ from those in devices produced on bulk silicon. The fabrication requirements for materials for complementary metal-oxide semiconductors (CMOS) and bipolar SOI devices are considered in this paper as well as the relationship between material fabrication and device requirements.
- OSTI ID:
- 5168487
- Report Number(s):
- CONF-890604-; CODEN: TANSA; TRN: 90-002914
- Journal Information:
- Transactions of the American Nuclear Society; (USA), Vol. 59; Conference: Annual meeting of the American Nuclear Society, Atlanta, GA (USA), 4-8 Jun 1989; ISSN 0003-018X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
DEFECTS
ELECTRICAL INSULATORS
FABRICATION
ION IMPLANTATION
MOS TRANSISTORS
OXIDES
PERFORMANCE
RADIOSENSITIVITY
SILICON
SUBSTRATES
TRANSIENTS
X RADIATION
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
OXYGEN COMPOUNDS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems