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Title: In situ preparation and transport properties of YBa sub 2 Cu sub 3 O sub 7 films on sapphire with Zr(Y)O sub 2 buffer layers

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.349819· OSTI ID:5160947
; ;  [1]; ; ;  [2]
  1. Daimler Benz AG, Research Institute, Frankfurt (Federal Republic of Germany)
  2. Institute for Solid State Physics, Technical University, Darmstadt (Federal Republic of Germany)

YBa{sub 2}Cu{sub 3}O{sub 7} films on sapphire substrates prepared by laser ablation show {ital c}-axis-oriented growth and critical temperatures as high as {ital T}{sub {ital c}}({ital R}=0)=90 K. Due to diffusion processes and the formation of a nonsuperconducting intermediate layer the critical current density {ital J}{sub {ital c}} is comparatively low. To overcome these difficulties the sapphire substrates were covered by Zr(Y)O{sub 2} films acting as diffusion barriers. The preparation of these films was performed by laser ablation using a multitarget system. The structure and the surfaces of the films were characterized by x-ray diffraction and scanning electron microscopy, respectively. The transport properties of the superconductor films are similar to those on suited substrates. Critical current densities up to {ital J}{sub {ital c}} (77 K)=5{times}10{sup 5} A/cm{sup 2} were achieved. In order to gain information about the pinning mechanisms measurements of the dependencies of {ital J}{sub {ital c}} on the orientation between the crystal {ital c} axis and the external magnetic fields were carried out using samples with different buffer layer thicknesses. From the received data no indication of pinning by point defects in addition to the intrinsic planar pinning mechanism was detected.

OSTI ID:
5160947
Journal Information:
Journal of Applied Physics; (United States), Vol. 70:11; ISSN 0021-8979
Country of Publication:
United States
Language:
English