Light-enhanced hydrogen motion in a -Si:H

Journal Article · Mon Nov 04 00:00:00 EST 1991 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.67.2686· OSTI ID:5158954

Santos, P V; Johnson, N M; Street, R A ^[1]

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1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California (USA)

We report the first direct observation of light-enhanced hydrogen motion in hydrogenated amorphous silicon. Diffusion enhancement increases with illumination intensity in undoped material and is suppressed in doped and in compensated material. The enhancement is attributed to an increased release rate of hydrogen from silicon-hydrogen bonds in the presence of photogenerated carriers. The implications of the effect for metastable defect formation are discussed.

• OSTI ID: 5158954
• Journal Information: Physical Review Letters; (United States), Vol. 67:19; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHOTON ACTIVATION ANALYSIS
AMORPHOUS STATE
CHEMICAL BONDS
DEFECTS
DIFFUSION
HYDROGEN ADDITIONS
METASTABLE STATES
PHOTOELECTRIC EFFECT
PHYSICAL RADIATION EFFECTS
ACTIVATION ANALYSIS
CHEMICAL ANALYSIS
ELEMENTS
ENERGY LEVELS
EXCITED STATES
PHOTOELECTROMAGNETIC EFFECTS
RADIATION EFFECTS
SEMIMETALS
360605* - Materials- Radiation Effects