Study of diffused solar cells based on upgraded metallurgical grade silicon

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5156169

Schlosser, V; Seeger, K; Wendl, K

Diffused solar cells were made from upgraded metallurgical silicon (UMG-Si). The influence of the diffusion temperature and time (T /SUB d/ , t /SUB d/ ) on solar cell power output is discribed by means of the minority carrier diffusion length (L), and junction current losses. Our experiments show that improvements in junction current losses by using higher process temperatures causes a decrease of L, resulting in reduced short circuit current densities. To meet both requirements low current losses as well as L>15 ..mu..m a low temperature polysilicon CVD process are discussed.

• Research Organization: Ludwig Boltzmann Institut fur Festkorperphysik Wien
• OSTI ID: 5156169
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
TEMPERATURE EFFECTS
THERMAL DIFFUSION
SILICON SOLAR CELLS
FABRICATION
POWER LOSSES
CHARGE CARRIERS
DIFFUSION LENGTH
PERFORMANCE
PHOTOCURRENTS
SEMICONDUCTOR JUNCTIONS
TIME DEPENDENCE
CURRENTS
DIFFUSION
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
ELEMENTS
ENERGY LOSSES
EQUIPMENT
JUNCTIONS
LENGTH
LOSSES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion