Depth profiling measurements on silicon with slow positrons

Conference · Fri Feb 01 00:00:00 EST 1991 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:5153238

Smith, D L; Smith, C; Evans, H E; Rice-Evans, P C ^[1]; Evans, J H ^[2]

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1. Department of Physics, Royal Holloway and Bedford New College, University of London, Egham, Surrey (England TW20 OEX)
2. Materials Development Division, Harwell Laboratory, Didcot, Oxfordshire (England OX11 ORA)

Samples of silicon dioxide on silicon and hydrogen-implanted silicon were studied using a low-energy positron beam. The Doppler S parameter vs. positron implantation energy curves were analysed using a positron diffusion model. Results reveal positron trapping at an interface 950 A beneath the surface on the SiO{sub 2}/Si sampler and the defect distribution resulting from implantation in the H{sup +} implanted specimen.

• OSTI ID: 5153238
• Report Number(s): CONF-900798-; CODEN: APCPC
• Journal Information: AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 218:1; Conference: 4. international workshop on slow-positron beam techniques for solids and surfaces, London (Canada), 3-6 Jul 1990; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
POSITRONS
ANNIHILATION
TRAPPING
SILICON
HYDROGEN ADDITIONS
GAMMA SPECTRA
INTERFACES
POINT DEFECTS
SILICON OXIDES
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC INTERACTIONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
INTERACTIONS
LEPTONS
MATTER
OXIDES
OXYGEN COMPOUNDS
PARTICLE INTERACTIONS
SEMIMETALS
SILICON COMPOUNDS
SPECTRA
360605* - Materials- Radiation Effects
654001 - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments