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Title: High-field magnetoresistance and de Haas--van Alphen effect in antiferromagnetic PrB sub 6 and NdB sub 6

Journal Article · · Physical Review (Section) B: Condensed Matter; (USA)
; ; ;  [1]; ; ; ;  [2]
  1. Material Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (USA)
  2. Institute of Material Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan (JP)

The transport properties and the de Haas--van Alphen (dHvA) effect have been measured for antiferromagnetic PrB{sub 6} and NdB{sub 6}. The number of conduction electrons is approximately one per unit cell. The magnetoresistance shows the existence of open orbits, implying a multiply connected Fermi surface. The angular dependence of the magnetoresistance is roughly similar to that of the reference material, LaB{sub 6}. The dHvA data in PrB{sub 6} show both paramagnetic and antiferromagnetic Fermi surfaces. The antiferromagnetic Fermi surface arises from new magnetic Brillouin zone boundaries and antiferromagnetic gaps introduced by the magnetic order, and the paramagnetic Fermi surface from magnetic breakdown through the small antiferromagnetic gaps in high field. Hybridization between the conduction electrons and the {ital f} electrons has been observed through the cyclotron masses, which in PrB{sub 6} are three times larger than the corresponding masses of LaB{sub 6}. In NdB{sub 6} only the antiferromagnetic Fermi surface, quite different from those of LaB{sub 6} and PrB{sub 6}, has been observed.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5147782
Journal Information:
Physical Review (Section) B: Condensed Matter; (USA), Vol. 40:16; ISSN 0163-1829
Country of Publication:
United States
Language:
English