Electron scattering by native defects in uniformly and modulation doped semiconductor structures

Conference · Wed Nov 01 00:00:00 EST 1989

OSTI ID:5147189

Walukiewicz, W

Formation of native defects in GaAs is described in terms of the amphoteric native defect model. It is shown that Fermi energy induced formation of gallium vacancies is responsible for the limitations of maximum free electron concentration in GaAs. The effect of the defects on electron mobility in heavily doped n-GaAs is quantitatively evaluated. Defect scattering explains the abrupt reduction of electron mobility at high doping levels. Also, it is demonstrated that native defects are responsible for the mobility reduction in inverted modulation doped GaAs/AlGaAs heterostructures. The amphoteric defect model also explains a distinct asymmetry in defect formation in n- and p-GaAs. In p-GaAs the Fermi level induced reduction of the defect formation energy is much smaller, and therefore the concentration of the native defects is negligible compared with the hole concentration. 43 refs., 5 figs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5147189
• Report Number(s): LBL-28105; CONF-891119-78; ON: DE90006084
• Resource Relation: Conference: Materials Research Society fall meeting, Boston, MA (USA), 27 Nov - 2 Dec 1989
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
DEFECTS
DOPED MATERIALS
ELECTRON MOBILITY
FERMI LEVEL
GALLIUM ARSENIDES
SCATTERING
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
ENERGY LEVELS
GALLIUM COMPOUNDS
MATERIALS
MOBILITY
PARTICLE MOBILITY
PNICTIDES
360602* - Other Materials- Structure & Phase Studies
360603 - Materials- Properties