S-i-s mm-wave mixers and detectors. Final report

Technical Report · Sat Oct 01 00:00:00 EDT 1983

OSTI ID:5134015

Jillie, D W; Kroger, H; Smith, L N; Shaw, D M

This program is an effort to achieve the ultimate goal of fabricating refractory superconducting S-I-S mixer devices for operation in mm-wave receivers in the quantum mode and in the 8-10 K temperature range. The following progress has been made toward the above goal: (1) development of in-house capability of depositing niobium carbonitride films (Nb (x) N(y) of device quality with transition temperatures to approx. 16 K; (2) development of NbC(x)N(y):aSi:Nb and NbC(x)N(y):Ge:Nb devices of very high quality; (3) fabrication and successful operation of niobium based S-I-S mixer chips; and (4) fabrication and evaluation of aSi and Ge barrier all-NbC(x)N(y) devices. NbC(x)N(y):Ge:Nb devices have been fabricated with chemical vapor deposited (CVD) polycrystalline arsenic-doped germanium barriers. All-Nb-S-I-S mixer chips were fabricated and sent to Goddard Institute for Space Studies to be evaluated. The noise temperature was approx. 60 K and the conversion loss of 5 dB. These results are comparable to Pb alloy junction results. A second-generation mixer was designed by GISS.

• Research Organization: Sperry Research Center, Sudbury, MA (USA)
• OSTI ID: 5134015
• Report Number(s): AD-A-134762/4; SRC-CR-83-33
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
MICROWAVE EQUIPMENT
SUPERCONDUCTORS
AMORPHOUS STATE
ARSENIDES
CHEMICAL VAPOR DEPOSITION
CRITICAL TEMPERATURE
GERMANIUM
JOSEPHSON JUNCTIONS
JUNCTIONS
LEAD ALLOYS
NIOBIUM CARBIDES
NIOBIUM NITRIDES
PHOTONS
SILICON
SPUTTERING
ALLOYS
ARSENIC COMPOUNDS
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
DEPOSITION
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
MASSLESS PARTICLES
METALS
NIOBIUM COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SUPERCONDUCTING JUNCTIONS
SURFACE COATING
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
420201* - Engineering- Cryogenic Equipment & Devices