Scanning tunneling microscopy. Final report, 1 Oct 87-30 Sep 90

Technical Report · Tue Mar 17 00:00:00 EST 1992

OSTI ID:5130447

Dow, J D

Scanning tunneling microscopy (STM) has been used to image and modify the surfaces of III-V, II-VI and group IV semiconductors. A tip-simulator based on a photocode was developed. The simulator allows the development of ultra-sensitive electronics for controlling STM tip movement. Various forms of 'nano-machining,' including chiselling, sanding, and sweeping of atoms on a surface, were developed. An STM design was modified to allow bending of long thin samples of Si(100) in UHV to permit the study of surface strain. A variety of studies were conducted on Au (in air) CdTe (in air), Hg(sub 1-x)Mn(sub x)Te (under glycerin), and Hg(sub 1-x)Cd(sub x)Te (in air and under glycerin).

• Research Organization: Notre Dame Univ., IN (United States). Dept. of Physics
• OSTI ID: 5130447
• Report Number(s): AD-A-249262/7/XAB; CNN: DAAL03-87-K-0112
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
47 OTHER INSTRUMENTATION
ELECTRON MICROSCOPES
DESIGN
SEMICONDUCTOR MATERIALS
MACHINING
CADMIUM TELLURIDES
CONTROL SYSTEMS
ELECTRON MICROSCOPY
GOLD
IMAGES
MANGANESE TELLURIDES
MERCURY TELLURIDES
SIMULATORS
SURFACE TREATMENTS
SURFACES
ANALOG SYSTEMS
CADMIUM COMPOUNDS
CHALCOGENIDES
ELEMENTS
FUNCTIONAL MODELS
MANGANESE COMPOUNDS
MATERIALS
MERCURY COMPOUNDS
METALS
MICROSCOPES
MICROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360601* - Other Materials- Preparation & Manufacture
440800 - Miscellaneous Instrumentation- (1990-)