SEU measurements using /sup 252/CF fission particles, on CMOS static RAMS, subjected to a continuous period of low dose rate /sup 60/CO irradiation

Conference · Tue Dec 01 00:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:5101393

Sanderson, T K; Mapper, D; Stephen, J H; Farren, J; Adams, L; Harboe-Sorensen, R

SEU measurements have been made on a number of CMOS static RAMs over a period of eight months while they were being continuously irradiated with /sup 60/Co gamma rays. The results are discussed and compared with those of other workers using different methods.

• Research Organization: Instrumentation and Applied Physics Div., Harwell Lab., UKAEA (GB)
• OSTI ID: 5101393
• Report Number(s): CONF-8707112-; TRN: 88-019184
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-34:6; Conference: Annual conference on nuclear and space radiation effects, Snowmass Village, CO, USA, 28 Jul 1987
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
MOS TRANSISTORS
LOW DOSE IRRADIATION
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
COBALT 60
GAMMA RADIATION
MEASURING METHODS
MEMORY DEVICES
SEMICONDUCTOR STORAGE DEVICES
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT ISOTOPES
ELECTROMAGNETIC RADIATION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
YEARS LIVING RADIOISOTOPES
360605* - Materials- Radiation Effects
420800 - Engineering- Electronic Circuits & Devices- (-1989)