Deposition of thin SiO{sub 2} films on polymers as a hard-coating using a microwave-ECR plasma
- Suzuki Motor Corp., Hamamatsu (Japan). Development Div. II
- Shizuoka Univ., Hamamatsu (Japan). Research Inst. of Electronics
SiO{sub 2} thin films were deposited on automobile plastics at low temperatures using a microwave activated ECR plasma. Oxygen was used as the plasma gas while tetraethoxysilane (TEOS) was used as the source gas which was introduced into the downstream. In the present investigation high quality SiO{sub 2} films were deposited on polycarbonate (PC) and polypropylene (PP) substrates with and without a mesh and the characteristics of hard coating films were studied. The film growth rate increases with the decrease of substrate temperature when a mesh is inserted into the plasma. The irregularities of polymer surfaces could be planarized by the deposition of 1.0 {micro}m thick SiO{sub 2} film. The dynamic hardness of PC and PP are increased by the deposition of SiO{sub 2} film, however, films deposited on PP is seen to be cracked while that of on PC is crack-free.
- OSTI ID:
- 504906
- Report Number(s):
- CONF-960401-; ISBN 1-55899-333-9; TRN: IM9733%%321
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Microwave processing of materials 5; Iskander, M.F. [ed.] [Univ. of Utah, Salt Lake City, UT (United States)]; Kiggans, J.O. Jr. [ed.] [Oak Ridge National Lab., TN (United States)]; Bolomey, J.C. [ed.] [Supelec, Gif-Sur-Yvette (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 430
- Country of Publication:
- United States
- Language:
- English
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