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Title: Tests of the radiation hardness of VLSI integrated circuits and silicon strip detectors for the SSC under neutron, proton, and gamma irradiation

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.289308· OSTI ID:5044343
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  1. Los Alamos National Lab., NM (United States)
  2. California Univ., Santa Cruz, CA (United States). Inst. for Particle Physics
  3. California Univ., Riverside, CA (United States)
  4. Missouri Univ., Rolla, MO (United States)
  5. INFN, Torino (IT)

As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. In this paper, the authors report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at U.C. Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC.

OSTI ID:
5044343
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:2; ISSN 0018-9499
Country of Publication:
United States
Language:
English

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