Surface damage on GaAs induced by reactive ion etching and sputter etching

Technical Report · Tue Apr 01 00:00:00 EST 1986

OSTI ID:5032725

Pang, S W

GaAs surface damage induced by reactive ion etching (RIE) using various gases is compared with sputter etching using inert gases. Anisotropic etching of GaAs with minimal surface damage can be obtained with most of the RIE conditions used. Sputter etching using inert gases introduces substantial damage on the GaAs surface, and the degree of damage is inversely proportional to the ion mass. In addition, it was found that the damage induced by Ar sputter etching can be greatly reduced by the introduction of reactive gases during etching. Recovery of the diode characteristics is observed after removing 500A of the etched surface using wet chemical solution or by removing 200A of the etched surface using RIE in Cl2 at 30V.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 5032725
• Report Number(s): AD-A-170555/7/XAB; JA-5805
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ETCHING
SPUTTERING
ARGON IONS
CHLORINE
DAMAGE
FABRICATION
INTEGRATED CIRCUITS
ION BEAMS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
ELECTRONIC CIRCUITS
ELEMENTS
GALLIUM COMPOUNDS
HALOGENS
IONS
MICROELECTRONIC CIRCUITS
NONMETALS
PNICTIDES
SURFACE FINISHING
360605* - Materials- Radiation Effects