Single-crystal Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties

Journal Article · Sat Mar 01 00:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.364239· OSTI ID:501312

Foster, C M; Bai, G; Csencsits, R; Vetrone, J; Jammy, R ^[1]; Wills, L A; Carr, E; Amano, J ^[2]

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1. Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)
2. Hewlett Packard Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304 (United States)

Single-crystal thin films of Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT) covering the full compositional range (0{le}{ital x}{le}1) were deposited by metal-organic chemical vapor deposition. Epitaxial SrRuO{sub 3}(001) thin films grown on SrTiO{sub 3}(001) substrates by rf-magnetron sputter deposition served as template electrode layers. X-ray diffraction, energy-dispersive x-ray spectroscopy, atomic force microscopy, transmission electron microscopy, and optical waveguiding were used to characterize the crystalline structure, composition, surface morphology, microstructure, refractive index, and film thickness of the deposited films. The PZT films were single crystalline for all compositions exhibiting cube-on-cube growth epitaxy with the substrate and showed very high degrees of crystallinity and orientation. The films exhibited typical root mean square surface roughness of {approximately}1.0{endash}2.5 nm. For tetragonal films, the surface morphology was dominated by grain tilting resulting from ferroelectric domain formation. We report the systematic compositional variation of the optical, dielectric, polarization, and electronic transport properties of these single-crystalline PZT thin films. The solid-solution phase diagram of the PZT system for thin films differs from the bulk due to epitaxy-induced strains and interfacial defect formation. High values of remanant polarization (30{endash}55 {mu}C/cm{sup 2}) were observed for ferroelectric compositions in the range of 0.8{le}{ital x}{le}0.2. Unlike previous studies, the dielectric constant exhibited a clear dependence on composition with values ranging from 225 to 650. The coercive fields decreased with increasing Zr concentration to a minimum of 20 kV/cm for {ital x}=0.8. The undoped films exhibited both high resistivity and dielectric-breakdown strength (10{sup 13}{endash}10{sup 14} {Omega}cm at 100 kV/cm and 300{endash}700 kV/cm, respectively). {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: ANL (Argonne National Laboratory (ANL), Argonne, IL)
• Sponsoring Organization: USDOE
• DOE Contract Number: W-31-109-ENG-38
• OSTI ID: 501312
• Journal Information: Journal of Applied Physics, Vol. 81, Issue 5; Other Information: PBD: Mar 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
PZT
ELECTRONIC STRUCTURE
OPTICAL PROPERTIES
X-RAY DIFFRACTION
X-RAY SPECTRA
TRANSMISSION ELECTRON MICROSCOPY
REFRACTIVE INDEX
PHASE DIAGRAMS
PERMITTIVITY
ELECTRIC CONDUCTIVITY
THIN FILMS
CRYSTAL STRUCTURE
CHEMICAL VAPOR DEPOSITION
CHEMICAL COMPOSITION
EPITAXY
FERROELECTRIC MATERIALS
STRAINS
SURFACES
MICROSTRUCTURE
DOMAIN STRUCTURE
POLARIZATION
BREAKDOWN