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Title: Use of an excimer lamp for photochemical resistless etching of thermal silicon oxide substrate

Abstract

Photochemical resistless etching was carried out by using a Xe{sub 2}* excimer lamp and a KrF excimer laser. The decomposition method with Xe{sub 2}* excimer lamp increases the decomposition efficiency by 100 times than that of using ArF excimer laser and etchant gas, CHClF{sub 2}. Xe{sub 2}* excimer lamp irradiation allowed decomposition of CHClF{sub 2} gas to produce CF{sub 2} radical with a small quantity of gas. The CF{sub 2} radical was polymerized to form fluorocarbon layer on the SiO{sub 2} substrate. Simultaneously, circuit patterned KrF excimer laser was vertically irradiated the fluorocarbon layer on the substrate for resistless etching. The etching depth was about 1,000 {angstrom}.

Authors:
;  [1]
  1. Tokai Univ., Hiratsuka, Kanagawa (Japan). Faculty of Electrical Engineering
Publication Date:
OSTI Identifier:
490886
Report Number(s):
CONF-951155-
ISBN 1-55899-300-2; TRN: IM9729%%137
Resource Type:
Book
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Advanced laser processing of materials -- Fundamentals and applications; Singh, R. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; Norton, D. [ed.] [Oak Ridge National Lab., TN (United States)]; Laude, L. [ed.] [Univ. of Mons-Hainaut, Mons (Belgium)]; Narayan, J. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Cheung, J. [ed.] [Rockwell International Science Center, Thousand Oaks, CA (United States)]; PB: 693 p.; Materials Research Society symposium proceedings, Volume 397
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ETCHING; SILICON OXIDES; KRYPTON FLUORIDE LASERS; PHOTOCHEMICAL REACTIONS; FREONS; PRESSURE DEPENDENCE; ULTRAVIOLET RADIATION; EFFICIENCY; EXPERIMENTAL DATA

Citation Formats

Kamata, N, and Murahara, M. Use of an excimer lamp for photochemical resistless etching of thermal silicon oxide substrate. United States: N. p., 1996. Web.
Kamata, N, & Murahara, M. Use of an excimer lamp for photochemical resistless etching of thermal silicon oxide substrate. United States.
Kamata, N, and Murahara, M. 1996. "Use of an excimer lamp for photochemical resistless etching of thermal silicon oxide substrate". United States.
@article{osti_490886,
title = {Use of an excimer lamp for photochemical resistless etching of thermal silicon oxide substrate},
author = {Kamata, N and Murahara, M},
abstractNote = {Photochemical resistless etching was carried out by using a Xe{sub 2}* excimer lamp and a KrF excimer laser. The decomposition method with Xe{sub 2}* excimer lamp increases the decomposition efficiency by 100 times than that of using ArF excimer laser and etchant gas, CHClF{sub 2}. Xe{sub 2}* excimer lamp irradiation allowed decomposition of CHClF{sub 2} gas to produce CF{sub 2} radical with a small quantity of gas. The CF{sub 2} radical was polymerized to form fluorocarbon layer on the SiO{sub 2} substrate. Simultaneously, circuit patterned KrF excimer laser was vertically irradiated the fluorocarbon layer on the substrate for resistless etching. The etching depth was about 1,000 {angstrom}.},
doi = {},
url = {https://www.osti.gov/biblio/490886}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}

Book:
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