Nitrogen doping in ZnSe by photo-assisted metalorganic vapor phase epitaxy

Journal Article · Tue Mar 01 00:00:00 EST 1994 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02670634· OSTI ID:478435

Fujita, Shizuo; Asano, Takeharu; Maehara, Kensaku; Fujita, Shigeo ^[1]

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1. Kyoto Univ. (Japan)

Doping characteristics of nitrogen in ZnSe using photo-assisted vapor phase epitaxy were investigated. The source precursors and the doping source were diethylzinc, dimethylselenide, and tertiarybutylamine. Photoluminescence, electrical properties of Schottky diodes, and electroluminescence from homo and double heterojunction diodes consistently supported p-type behavior of the ZnSe:N layers. At the conditions investigated, higher doping was achieved at lower substrate temperature and irradiation intensity; e.g., 350{degrees}C and 45 mW/cm{sup 2}, respectively. As a guideline, net acceptor concentration was estimated as 2 x 10{sup 17} cm{sup -3} for the ZnSe:N layer with nitrogen concentration of 5 x 10{sup 17} cm{sup -1} revealed by secondary ion mass spectroscopy. 23 refs., 8 figs.

• Sponsoring Organization: USDOE
• OSTI ID: 478435
• Journal Information: Journal of Electronic Materials, Vol. 23, Issue 3; Other Information: PBD: Mar 1994
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
36 MATERIALS SCIENCE
ZINC SELENIDES
CRYSTAL DOPING
VAPOR PHASE EPITAXY
ELECTROLUMINESCENCE
NITROGEN
ORGANOMETALLIC COMPOUNDS
MASS SPECTROSCOPY
ELECTRICAL PROPERTIES