Plasma enhanced chemical vapor deposition of zirconium nitride thin films
- Los Alamos National Lab., NM (United States)
- Univ. of Houston, TX (United States). Dept. of Chemistry
Depositions of high quality zirconium nitride, (Zr{sub 3}N{sub 4}), films using the metal-organic precursor Zr(NEt{sub 2}){sub 4} were carried out in a microwave argon/ammonia plasma (2.45 GHz). The films were deposited on crystalline silicon wafers and quartz substrates at temperatures of 200--400 C. The transparent yellow films have resistivity values greater than M{Omega} cm. The stoichiometry is N/Zr = 1.3, with less than 5 atom % carbon and little or no oxygen. The hydrogen content is less than 9 atom %, and it does not vary with deposition temperature. The growth rates range from 600 to 1,200 {angstrom}/min, depending on the flow rates and precursor bubbler temperature. X-ray diffraction studies show a Zr{sub 3}N{sub 4} film deposited at 400 C is polycrystalline with some (220) orientation. The crystallite size is approximately 30 {angstrom}. The band gap, as estimated from transmission spectra, is 3.1 eV.
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Los Alamos National Lab., NM (United States)
- OSTI ID:
- 470920
- Report Number(s):
- CONF-951155-; ISBN 1-55899-313-4; TRN: 97:008686
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Covalent ceramics III -- Science and technology of non-oxides; Hepp, A.F. [ed.] [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center]; Kumta, P.N. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Sullivan, J.J. [ed.] [MKS Instruments, Andover, MA (United States)]; Fischman, G.S. [ed.] [Food and Drug Administration, Rockville, MD (United States)]; Kaloyeros, A.E. [ed.] [Univ. of Albany, NY (United States)]; PB: 499 p.; Materials Research Society symposium proceedings, Volume 410
- Country of Publication:
- United States
- Language:
- English
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