MeV ion implantation induced damage in relaxed Si{sub 1{minus}x}Ge{sub x}
- Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark)
- Physics Department, Trinity College, Dublin 2 (Ireland)
- INFM and Dipartimento di Fisica, Universita di Catania, Corso Italia 57, I-95129 Catania (Italy)
- CNR-IMETEM, Stradale Primosole 50, I-95100 Catania (Italy)
- CNR-LAMEL, Via Gobetti 101, I-40129 Bologna (Italy)
- Institut fuer Physik, Universitaet Augsburg, D-86135 Augsburg (Germany)
- Laboratoire PHASE, UPR 292 du CNRS, BP 20, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France)
- Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH (United Kingdom)
The damage produced by implanting, at room temperature, 3-{mu}m-thick relaxed Si{sub 1{minus}x}Ge{sub x} alloys of high crystalline quality with 2 MeV Si{sup +} ions has been studied as a function of Ge content ({ital x}=0.04, 0.13, 0.24, or 0.36) and Si dose in the dose range 10{sup 10}{endash}2{times}10{sup 15} cm{sup {minus}2}. The accumulation of damage with increasing dose has been investigated by Rutherford backscattering spectrometry, optical reflectivity depth profiling, and transmission electron microscopy. An enhanced level of damage, and a strong decrease in the critical dose for the formation of a buried amorphous layer in Si{sub 1{minus}{ital x}}Ge{ital {sub x}} is observed with increasing {ital x}. Electron paramagnetic resonance studies show that the dominant defects produced by the implantation are Si and Ge dangling bonds in amorphouslike zones of structure similar to {ital a}-Si{sub 1{minus}{ital x}}Ge{ital {sub x}} films of the same {ital x}, and that the effect of increasing the ion dose is primarily to increase the volume fraction of material present in this form until a continuous amorphous layer is formed. A comparative study of the optically determined damage in the alloys with the use of a damage model indicates a significant increase in the primary production of amorphous nuclei in the alloys of Ge content {ital x}{gt}0.04. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 467202
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 5; Other Information: PBD: Mar 1997
- Country of Publication:
- United States
- Language:
- English
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