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Title: Numerical modeling of giant magnetoresistance effect for application to magnetic data storage. CRADA final report for CRADA number Y-1293-0175

Numerical modeling of giant magnetoresistance effect for application to magnetic data storage. CRADA final report for CRADA number Y-1293-0175 The giant magnetoresistance (GMR) effect is a change in the electrical resistance of a magnetically inhomogeneous material that occurs when an applied magnetic field aligns the magnetic moments in different regions of the material. GMR allows the development of very small and sensitive devices for detecting and measuring magnetic fields. Such devices have many applications including the sensing of data on magnetic disk drives and in magnetic random access memory cells. This Cooperative Research and Development Agreement between Lockheed Martin Energy Systems and IBM Almaden Research Center was a joint experimental and theoretical program to obtain a better understanding of the giant magnetoresistance effect with the goal of optimizing the effect for application to magnetic data storage devices. The CRADA was successful in developing a detailed microscopic understanding of GMR and in pointing out strategies for increasing the GMR effect.
Authors: ;
Publication Date:
OSTI Identifier:461241
Report Number(s):Y/AMT--396
ON: DE97004557; CRN: C/Y-12--93-0175; TRN: 97:002606
DOE Contract Number:AC05-84OR21400
Resource Type:Technical Report
Data Type:
Resource Relation:Other Information: PBD: 16 Sep 1996
Research Org:Oak Ridge Y-12 Plant, TN (United States)
Sponsoring Org:USDOE, Washington, DC (United States)
Country of Publication:United States
Language:English
Subject: 99 MATHEMATICS, COMPUTERS, INFORMATION SCIENCE, MANAGEMENT, LAW, MISCELLANEOUS; 36 MATERIALS SCIENCE; MAGNETIC STORAGE DEVICES; READOUT SYSTEMS; TRANSITION ELEMENTS; MAGNETORESISTANCE; ALLOYS; HALL EFFECT