Kinetic modeling of the chemical vapor deposition of tin oxide from tetramethyltin and oxygen

Journal Article · Thu Jun 25 00:00:00 EDT 1992 · Journal of Physical Chemistry

DOI:https://doi.org/10.1021/j100192a035· OSTI ID:457779

Zawadzki, A G ^[1]; Giunta, C J ^[2]; Gordon, R G ^[3]

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1. AT&T Bell Labs., Holmdel, NJ (United States)
2. LeMoyne College, Syracuse, NY (United States)
3. Harvard Univ., Cambridge, MA (United States)

The kinetics of the chemical vapor deposition of tin oxide films from tetramethyltin (TMT) and oxygen are determined. This proposed mechanism, which reproduces the results of Borman and Gordon, is a branched chain process with a key intermediate of (CH{sub 3}){sub 3}SnOH whose decomposition and oxidation leads to film growth and release of hydrocarbons. The modeling in this paper indicates that the rate-limiting steps occur in the gas phase, and the gas-phase oxidation of TMT has different pathways than neopentane. 91 refs., 9 figs., 5 tabs.

• Sponsoring Organization: USDOE
• OSTI ID: 457779
• Journal Information: Journal of Physical Chemistry, Vol. 96, Issue 13; Other Information: PBD: 25 Jun 1992
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
40 CHEMISTRY
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CHEMICAL REACTION KINETICS
TIN OXIDES
THIN FILMS