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Title: Photoassisted anodic etching of gallium nitride

Abstract

The first study of photo-assisted anodic etching of unintentionally doped n-GaN at room temperature is reported here. The electrolyte used is a mixture of buffered aqueous solution of tartaric acid and ethylene glycol. The etching rate varies from {approximately}20 {angstrom}/min to as high as 1600 {angstrom}/min. A systematic study shows that (1) the etch rate, as well as the surface roughness, increases with the current density; (2) the etching rate is the highest when the pH of the electrolyte is {approximately}7; and (3) the etching is faster when there is more ethylene glycol in the electrolyte solution. Ga-N-based III-V nitrides are important candidates for applications in blue light emitters and lasers, high voltage and high temperature electronics.

Authors:
; ;  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Electrical, Computer, and System Engineering
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
452204
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 144; Journal Issue: 1; Other Information: PBD: Jan 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; GALLIUM NITRIDES; ETCHING; LASER MATERIALS; ELECTRONIC EQUIPMENT; ULTRAVIOLET RADIATION; TARTARIC ACID; GLYCOLS

Citation Formats

Lu, H, Wu, Z, and Bhat, I. Photoassisted anodic etching of gallium nitride. United States: N. p., 1997. Web. doi:10.1149/1.1837355.
Lu, H, Wu, Z, & Bhat, I. Photoassisted anodic etching of gallium nitride. United States. https://doi.org/10.1149/1.1837355
Lu, H, Wu, Z, and Bhat, I. 1997. "Photoassisted anodic etching of gallium nitride". United States. https://doi.org/10.1149/1.1837355.
@article{osti_452204,
title = {Photoassisted anodic etching of gallium nitride},
author = {Lu, H and Wu, Z and Bhat, I},
abstractNote = {The first study of photo-assisted anodic etching of unintentionally doped n-GaN at room temperature is reported here. The electrolyte used is a mixture of buffered aqueous solution of tartaric acid and ethylene glycol. The etching rate varies from {approximately}20 {angstrom}/min to as high as 1600 {angstrom}/min. A systematic study shows that (1) the etch rate, as well as the surface roughness, increases with the current density; (2) the etching rate is the highest when the pH of the electrolyte is {approximately}7; and (3) the etching is faster when there is more ethylene glycol in the electrolyte solution. Ga-N-based III-V nitrides are important candidates for applications in blue light emitters and lasers, high voltage and high temperature electronics.},
doi = {10.1149/1.1837355},
url = {https://www.osti.gov/biblio/452204}, journal = {Journal of the Electrochemical Society},
number = 1,
volume = 144,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1997},
month = {Wed Jan 01 00:00:00 EST 1997}
}