Low-load indentation behavior of HfN thin films deposited by reactive rf sputtering

Journal Article · Wed Jan 01 00:00:00 EST 1997 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1997.0011· OSTI ID:450281

Nowak, R; Li, C L; Maruno, S ^[1]

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1. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokisco-cho, Showa-ku, Nagoya 466 (Japan)

Deformation of HfN thin films deposited by reactive sputtering method on silicon and alumina substrates has been investigated using depth-sensing indentation. The experiments performed in a low load range (2{endash}50 mN) revealed that the even extremely shallow indentations were affected by elastic/plastic response of the substrate. The analysis of the shape of the indentation load-depth hysteresis loops and of conventional hardness data was supplemented by considerations based on the recently proposed energy principle of indentation. {copyright} {ital 1997 Materials Research Society.}

• OSTI ID: 450281
• Journal Information: Journal of Materials Research, Vol. 12, Issue 1; Other Information: PBD: Jan 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HAFNIUM NITRIDES
SPUTTERING
HARDNESS
MECHANICAL PROPERTIES
THIN FILMS
DEPOSITION
MATERIALS TESTING