Efficient direct ZnO/CIS solar cells
- Washington State University at Tri-Cities, 100 Sprout Rd., Richland, Washington 99352 (United States)
This paper describes investigations of CIS solar cells with ZnO window layers deposited by MOCVD. These studies have been conducted with graded absorber CIS substrates obtained from Siemens Solar. Cell fabrication involves surface preparation of the Siemens substrate, growth of 200 to 400 A of undoped ZnO by MOCVD, deposition of a highly conducting ZnO top contact layer and deposition of a Ni/Ag collector grid. MOCVD growth of ZnO is accomplished in a SPIRE 500XT reactor by reacting a zinc adduct and tetrahydrofuran. Processing development has been conducted by forming test cells on ZnO/CIS structures by depositing thin, transparent Al contacts 2.8 mm in diameter on top of the ZnO window layer to serve as contacts. Several cells have been completed with a total area efficiency {ge}11.0{percent}, with the best result being 11.3{percent}. The best active area efficiency is approximately 12{percent}. Other topics discussed include current-voltage characteristics of direct ZnO/CIS cells. {copyright} {ital 1996 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 450122
- Report Number(s):
- CONF-9605265-; ISSN 0094-243X; TRN: 9703M0051
- Journal Information:
- AIP Conference Proceedings, Vol. 353, Issue 1; Conference: 13. NREL photovoltaics program review meeting, Lakewood, CO (United States), 16-19 May 1996; Other Information: PBD: Jan 1996
- Country of Publication:
- United States
- Language:
- English
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