skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Absorber processing issues in high-efficiency, thin-film Cu(In,Ga)Se{sub 2}-based solar cells

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.49376· OSTI ID:450089
; ; ; ; ; ; ;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Three approaches to thin-film Cu(In,Ga)Se{sub 2} absorber fabrication are considered. They are generically described in terms of the sequential or concurrent nature of source material delivery, selenium delivery, and compound formation. A two-stage evaporation process successfully produced the absorber component of a world-record, 17.1{percent} efficient solar cell. Alternative approaches that reduce the requirements for high substrate temperatures are considered. The relationship between absorber process parameters, band gap profile, and device performance are examined. Engineering the [Ga]/([Ga]+[In]) profile in the absorber has led to the reported advances. {copyright} {ital 1996 American Institute of Physics.}

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
DOE Contract Number:
AC36-83CH10093
OSTI ID:
450089
Report Number(s):
CONF-9605265-; ISSN 0094-243X; TRN: 9703M0008
Journal Information:
AIP Conference Proceedings, Vol. 353, Issue 1; Conference: 13. NREL photovoltaics program review meeting, Lakewood, CO (United States), 16-19 May 1996; Other Information: PBD: Jan 1996
Country of Publication:
United States
Language:
English