Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor
- Univ. of Arizona, Tucson, AZ (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- RLP Research, Inc., Albuquerque, NM (United States)
Ionizing-radiation-induced gain degradation in lateral PNP bipolar junction transistors is due to an increase in base current as a result of recombination at the surface of the device. A qualitative model is presented which identifies the physical mechanism responsible for excess base current. The increase in surface recombination velocity due to interface traps results in an increase in excess base current and the positive oxide charge moderates the increase in excess base current and changes the slope of the current-voltage characteristics. Analytical and empirical models have been developed to quantitatively describe the excess base current response to ionizing radiation. It is shown that the surface recombination velocity dominates the excess base current response to total dose.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 445475
- Report Number(s):
- CONF-960773-; ISSN 0018-9499; TRN: 97:005160
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 43, Issue 6Pt1; Conference: Institute of Electrical and Electronics Engineers/Nuclear and Space Radiation Effects conference (NSREC `96), Indian Wells, CA (United States), 15-19 Jul 1996; Other Information: PBD: Dec 1996
- Country of Publication:
- United States
- Language:
- English
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