A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

Journal Article · Sun Dec 01 00:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556888· OSTI ID:445461

Johnson, G H; Galloway, K F; Schrimpf, R D; Allenspach, M ^[1]; Titus, J L ^[2]; Wheatley, C F ^[3]; Dachs, C ^[4]

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1. Univ. of Arizona, Tucson, AZ (United States)
2. Naval Surface Warfare Center, Crane, IN (United States)
3. Wheatley (C.F.), Drums, PA (United States)
4. Univ. Montpellier II (France)

The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.

• Sponsoring Organization: Defense Nuclear Agency, Washington, DC (United States)
• OSTI ID: 445461
• Report Number(s): CONF-960773-; ISSN 0018-9499; TRN: 97:005146
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 43, Issue 6Pt1; Conference: Institute of Electrical and Electronics Engineers/Nuclear and Space Radiation Effects conference (NSREC `96), Indian Wells, CA (United States), 15-19 Jul 1996; Other Information: PBD: Dec 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
MOSFET
PHYSICAL RADIATION EFFECTS
THEORETICAL DATA
HEAVY IONS
FAILURES
COMPUTERIZED SIMULATION