Single event upset cross sections at various data rates

Journal Article · Sun Dec 01 00:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556878· OSTI ID:443059

Reed, R A; Marshall, C J; McMorrow, D ^[1]; Carts, M A; Marshall, P W; Buchner, S ^[1]; La Macchia, M; Mathes, B ^[2]

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1. Naval Research Lab., Washington, DC (United States)
2. Motorola GSTG, Scottsdale, AZ (United States)

The authors present data which show that Single Event Upset (SEU) cross section varies linearly with frequency for most devices tested. They show that the SEU cross section can increase dramatically away from a linear relationship when the test setup is not optimized, or when testing near the maximum operating frequency. They also observe non-linear behavior in some complex circuit topologies. Knowledge of the relationship between SEU cross section and frequency is important for estimates of on-orbit SEU rates.

• OSTI ID: 443059
• Report Number(s): CONF-960773-; ISSN 0018-9499; TRN: IM9712%%484
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 43, Issue 6; Conference: Institute of Electrical and Electronics Engineers/Nuclear and Space Radiation Effects conference (NSREC `96), Indian Wells, CA (United States), 15-19 Jul 1996; Other Information: PBD: Dec 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
FREQUENCY DEPENDENCE
SPACE FLIGHT
EXPERIMENTAL DATA