Breakdown properties of irradiated MOS capacitors
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. di Padova (Italy). Dipt. di Elettronica e Informatica
- Univ. di Padova (Italy). Dept. di Elettronica e Informatica
- SGS-Thomson Microelectronics, Agrate Brianza (Italy)
- CNR-FRAE, Bologna (Italy)
The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co{sup 60} gamma and 10{sup 14} neutrons/cm{sup 2} only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested.
- OSTI ID:
- 443029
- Report Number(s):
- CONF-960773-; ISSN 0018-9499; TRN: IM9712%%454
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 43, Issue 6; Conference: Institute of Electrical and Electronics Engineers/Nuclear and Space Radiation Effects conference (NSREC `96), Indian Wells, CA (United States), 15-19 Jul 1996; Other Information: PBD: Dec 1996
- Country of Publication:
- United States
- Language:
- English
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