Integrated chemiresistor and work function solid state microsensor array
Abstract
The conducting polymer, polyaniline, was used in fabricating the polyaniline gate field-effect transistors (PANIFETs). The polymer gate was formed at the wafer level by spin-coating chemically prepared polyaniline (PANIC) from a solution of formic acid, patterning photolithographically, and etching in oxygen plasma. Contact to the gate was realized through two platinum lines positioned on both sides of the polyaniline gate. This sensor design allowed the simultaneous measurement of work function and impedance changes.
- Authors:
-
- Environmental Molecular Sciences Lab., Richland, WA (United States)
- Publication Date:
- OSTI Identifier:
- 441321
- Report Number(s):
- CONF-960782-
TRN: 96:006557-0092
- DOE Contract Number:
- AC06-76RL01830
- Resource Type:
- Conference
- Resource Relation:
- Conference: 6. international meeting on chemical sensors, Gaithersburg, MD (United States), 22-25 Jul 1996; Other Information: PBD: 1996; Related Information: Is Part Of The 6th international meeting on chemical sensors; PB: 313 p.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; MEASURING INSTRUMENTS; DESIGN; HYDROGEN; MONITORING; AMMONIA; PLASMA; WORK FUNCTIONS; PERFORMANCE; ORGANIC POLYMERS; FIELD EFFECT TRANSISTORS
Citation Formats
Domansky, K, Li, J, Josowicz, M, and Janata, J. Integrated chemiresistor and work function solid state microsensor array. United States: N. p., 1996.
Web.
Domansky, K, Li, J, Josowicz, M, & Janata, J. Integrated chemiresistor and work function solid state microsensor array. United States.
Domansky, K, Li, J, Josowicz, M, and Janata, J. 1996.
"Integrated chemiresistor and work function solid state microsensor array". United States.
@article{osti_441321,
title = {Integrated chemiresistor and work function solid state microsensor array},
author = {Domansky, K and Li, J and Josowicz, M and Janata, J},
abstractNote = {The conducting polymer, polyaniline, was used in fabricating the polyaniline gate field-effect transistors (PANIFETs). The polymer gate was formed at the wafer level by spin-coating chemically prepared polyaniline (PANIC) from a solution of formic acid, patterning photolithographically, and etching in oxygen plasma. Contact to the gate was realized through two platinum lines positioned on both sides of the polyaniline gate. This sensor design allowed the simultaneous measurement of work function and impedance changes.},
doi = {},
url = {https://www.osti.gov/biblio/441321},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}
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