Vapor pressure of chlorine trifluoride from 300 K to 317 K

Journal Article · Wed Jan 01 00:00:00 EST 1997 · Journal of Chemical and Engineering Data

DOI:https://doi.org/10.1021/je960286g· OSTI ID:438919

Sako, Takeshi; Horiguchi, Sadashige ^[1]; Ichimaru, Hiroshi; Nakagawa, Shinsuke ^[2]

---

1. National Inst. of Materials and Chemical Research, Tsukuba, Ibaraki (Japan)
2. Central Glass Co., Ltd., Ube, Yamaguchi (Japan). Chemical Research Center

Chlorine trifluoride (ClF{sub 3}) is widely used as a nonplasma etching or cleaning gas, especially in the semiconductor manufacture. Vapor pressure of chlorine trifluoride was measured by a static-type apparatus from 300 K to 317 K with corresponding pressures from 0.1848 MPa to 0.3349 MPa. The uncertainty of the measurement was less than {+-}0.03 K in temperature and {+-}0.3 kPa in pressure. The purity of the sample was more than 99.9999 mass %. The vapor pressure at 313.15 K was 0.2947 MPa. The experimental data were correlated by the Antoine and Frost-Kalkwarf equations. The correlated deviations of both equations were less than {+-}0.05%.

• OSTI ID: 438919
• Journal Information: Journal of Chemical and Engineering Data, Vol. 42, Issue 1; Other Information: PBD: Jan-Feb 1997
• Country of Publication: United States
• Language: English

Related Subjects

54 ENVIRONMENTAL SCIENCES
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
CHLORINE FLUORIDES
VAPOR PRESSURE
SEMICONDUCTOR DEVICES
EQUATIONS OF STATE
EXPERIMENTAL DATA
AIR POLLUTION CONTROL