SciTech Connect

Title: Strongly localized donor level in oxygen doped gallium nitride

Strongly localized donor level in oxygen doped gallium nitride A classification in terms of localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of free carrier concentration in highly O doped GaN epitaxial films at 22 GPa, indicating the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon coupled mode, we find similarities with results on highly n-type bulk crystals. We refine the model of localized defects in GaN and transfer it to the AlGaN system.
Authors: ; ; ; ; ; ;
Publication Date:
OSTI Identifier:OSTI ID: 434361
Report Number(s):LBNL--39218; CONF-960781--8
ON: DE97001220
DOE Contract Number:AC03-76SF00098
Resource Type:Conference
Resource Relation:Conference: International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996; Other Information: PBD: Aug 1996
Research Org:Lawrence Berkeley National Lab., CA (United States)
Sponsoring Org:USDOE Office of Energy Research, Washington, DC (United States)
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; GALLIUM NITRIDES; PHYSICAL PROPERTIES; DOPED MATERIALS; CARRIER DENSITY; PRESSURE DEPENDENCE; VERY HIGH PRESSURE; CRYSTAL DEFECTS; ALUMINIUM NITRIDES; OXYGEN ADDITIONS