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Title: Strongly localized donor level in oxygen doped gallium nitride

A classification in terms of localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of free carrier concentration in highly O doped GaN epitaxial films at 22 GPa, indicating the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon coupled mode, we find similarities with results on highly n-type bulk crystals. We refine the model of localized defects in GaN and transfer it to the AlGaN system.
Authors:
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Publication Date:
OSTI Identifier:
434361
Report Number(s):
LBNL--39218; CONF-960781--8
ON: DE97001220
DOE Contract Number:
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996; Other Information: PBD: Aug 1996
Research Org:
Lawrence Berkeley National Lab., CA (United States)
Sponsoring Org:
USDOE Office of Energy Research, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; PHYSICAL PROPERTIES; DOPED MATERIALS; CARRIER DENSITY; PRESSURE DEPENDENCE; VERY HIGH PRESSURE; CRYSTAL DEFECTS; ALUMINIUM NITRIDES; OXYGEN ADDITIONS