CdZnTe photodiode arrays for medical imaging

Journal Article · Thu Aug 01 00:00:00 EDT 1996 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02655026· OSTI ID:420812

Sudharsanan, R; Parodos, T; Karam, N H ^[1]; Ruzin, A; Nemirovsky, Y ^[2]

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1. Spire Corporation, Bedford, MA (United States)
2. Technion-Israel Inst. of Technology, Haifa (Israel)

In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure Bridgman-grown CdZnTe substrates with bulk resistivities in the range 10{sup 8} to 10{sup 10} ohm-cm were used. CdZnTe Schottky photodiodes were formed with In and Ti/Au contacts. Diode arrays with pixel sizes from 1000 x 1000 {mu}m to 100 x 100 {mu}m were fabricated. The diode`s I-V characteristics exhibited low leakage current and high bulk resistivity; leakage current decreased as diode pixel size was reduced. Response of these detector arrays to high energy photons was uniform and their energy resolution improved with smaller pixel size. 14 refs., 9 figs.

• Sponsoring Organization: USDOE
• DOE Contract Number: FG02-94ER81904
• OSTI ID: 420812
• Report Number(s): CONF-9510388-; ISSN 0361-5235; TRN: 96:006536-016
• Journal Information: Journal of Electronic Materials, Vol. 25, Issue 8; Conference: 1995 U.S. workshop on the physics and chemistry of mercury cadium telluride and othe IR materials, Baltimore, MD (United States), 10-12 Oct 1995; Other Information: PBD: Aug 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
RADIATION DETECTORS
DESIGN
FABRICATION
CADMIUM TELLURIDES
CADMIUM ALLOYS
GAMMA RADIATION
SEMICONDUCTOR DIODES
PHOTODIODES
ELECTRICAL PROPERTIES
SCHOTTKY BARRIER DIODES
MEDICAL EXAMINATIONS