15-{micro}m 128 x 128 GaAs/Al{sub x}Ga{sub 1{minus}x}As quantum well infrared photodetector focal plane array camera

Journal Article · Wed Jan 01 00:00:00 EST 1997 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/16.554790· OSTI ID:419744

Gunapala, S D; Park, J S; Sarusi, G; Lin, T L; Liu, J K; Maker, P D; Muller, R E ^[1]; Shott, C A; Hoelter, T ^[2]

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1. Jet Propulsion Lab., Pasadena, CA (United States)
2. Amber, Goleta, CA (United States)

In this paper, the authors discuss the development of very sensitive, very long wavelength infrared GaAs/Al{sub x}Ga{sub 1{minus}x}As quantum well infrared photodetectors (QWIP`s) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15-{micro}m cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NE{Delta}T) of 30 mK has been achieved.

• Sponsoring Organization: National Aeronautics and Space Administration, Washington, DC (United States)
• OSTI ID: 419744
• Journal Information: IEEE Transactions on Electron Devices, Vol. 44, Issue 1; Other Information: PBD: Jan 1997
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
INFRARED RADIATION
RADIATION DETECTION
CAMERAS
DESIGN
SEMICONDUCTOR DETECTORS
HETEROJUNCTIONS
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES