The effects of KCN etching on Cu-rich epitaxial CuInSe{sub 2} thin films
- Electrotechnical Lab., Tsukuba (Japan)
- Matsushita Electric Industries, Ltd., Kyoto (Japan). Central Research Labs.
A series of Cu-rich CuInSe{sub 2} epitaxial thin films were grown by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 C. All samples were grown with an excess of Cu. Electron microprobe analysis (EPMA) indicated a Cu/In ratio of about 2.1--2.6 in the as-grown films. Additionally, the Se/(In+Cu) ratio was observed to be {approximately}0.95 indicating that the films were slightly Se poor. These Cu-rich samples were etched in a KCN solution for periods ranging from 30 seconds to 3 minutes. EPMA measurements indicated that the bulk Cu/In ratio was reduced to {approximately}0.92 in all films regardless of etching time. Atomic force microscopy (AFM) was used to characterize the topology of each sample before and after etching. These measurements indicated that the precipitates present on the as-grown films were removed and large nearly isotropic holes were etched into the sample to a depth of over 1,000 {angstrom} even for etching times as short as 30 seconds. The samples were also evaluate both before and after etching using a Phillips MRD diffractometer with parallel beam optics and a 18,000 watt Cu rotating anode X-ray source in the chalcopyrite [001] , [101], and [112] directions. A peak was observed at {approximately}15 degrees in the [001] scan after etching consistent with the presence of the ordered vacancy compound, CuIn{sub 2}Se{sub 5}.
- OSTI ID:
- 417679
- Report Number(s):
- CONF-960401-; ISBN 1-55899-329-0; TRN: IM9705%%52
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Thin films for photovoltaic and related device applications; Ginley, D. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Catalano, A. [ed.] [Technology Assessment Group, Boulder, CO (United States)]; Schock, H.W. [ed.] [Univ. Stuttgart (Germany)]; Eberspacher, C. [ed.] [Unisun, Newbury Park, CA (United States)]; Peterson, T.M. [ed.] [Electric Power Research Inst., Palo Alto, CA (United States)]; Wada, Takahiro [ed.] [Matsushita Electric Industries Co., Ltd., Kyoto (Japan)]; PB: 621 p.; Materials Research Society symposium proceedings, Volume 426
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sharp optical emissions from Cu-rich, polycrystalline CuInSe{sub 2} thin films
Growth and characterization of CuInSe{sub 2} epitaxial films for device applications
Related Subjects
14 SOLAR ENERGY
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
COPPER SELENIDES
ETCHING
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
INDIUM SELENIDES
SOLAR CELLS
SEMICONDUCTOR MATERIALS
OPTICAL EQUIPMENT
SUBSTRATES
GALLIUM ARSENIDES
ELECTRON MICROPROBE ANALYSIS
MICROSCOPY
MORPHOLOGY
PARTICULATES
X-RAY DIFFRACTION
ELECTRON DIFFRACTION