ZnO/c-Si heterojunction interface tuning by interlayers
- Hahn-Meitner-Inst., Berlin (Germany). Dept. Photovoltaics
The junction properties of isotype and anisotype n{sup +}-ZnO/c-Si heterostructures have been studied by electrical and photoelectrical methods. The authors present evidence that the junction properties are strongly affected by a 10--30 nm thick ZnO layer closest to the heterointerface with distinctively different properties than those of the ZnO film bulk. This layer supports a dominant current flow via multistep tunneling-recombination. When a 10 nm thin ZnS or ZnSe interlayer is inserted charge transport is controlled by thermionic emission. The interlayer acts as spacer and increases the band bending in the silicon absorber. However, there is still a too high trap density at the interlayer/c-Si interface, so that V{sub oc} does not exceed 0.25--0.32 V.
- OSTI ID:
- 417669
- Report Number(s):
- CONF-960401-; ISBN 1-55899-329-0; TRN: IM9705%%42
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Thin films for photovoltaic and related device applications; Ginley, D. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Catalano, A. [ed.] [Technology Assessment Group, Boulder, CO (United States)]; Schock, H.W. [ed.] [Univ. Stuttgart (Germany)]; Eberspacher, C. [ed.] [Unisun, Newbury Park, CA (United States)]; Peterson, T.M. [ed.] [Electric Power Research Inst., Palo Alto, CA (United States)]; Wada, Takahiro [ed.] [Matsushita Electric Industries Co., Ltd., Kyoto (Japan)]; PB: 621 p.; Materials Research Society symposium proceedings, Volume 426
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
HETEROJUNCTIONS
FABRICATION
MICROSTRUCTURE
PHOTOCONDUCTIVITY
ZINC OXIDES
SPUTTERING
SILICON
ZINC SULFIDES
ZINC SELENIDES
PHOTOVOLTAIC CELLS
MATERIALS
ALUMINIUM ADDITIONS
INTERFACES
DOPED MATERIALS
AUGER ELECTRON SPECTROSCOPY
RUTHERFORD SCATTERING
ELLIPSOMETRY
SCANNING ELECTRON MICROSCOPY
ELECTRIC POTENTIAL
ELECTRIC CURRENTS
QUANTUM EFFICIENCY
EXPERIMENTAL DATA