Photovoltaic effect in a-Si/c-Si heterostructure prepared by RF magnetron sputtering technique
- Inst. of Electronic Technology, Moscow (Russian Federation). Dept. of Microtechnology
Photosensitivity spectral dependencies of the a-Si(n-type)/c-Si(p-type) heterostructure for the different reverse biases, V{sub b}, amorphous Si film thickness, substrate predeposition temperatures, T{sub s}, and annealing conditions, T{sub a}, were investigated in the wavelengths range of 500--1,200 nm. It was found that the position of the relative photosensitivity maximum depends on T{sub a} and V{sub b} and can be varied in the wavelengths range of 840--1,080 nm. The energy band diagram of the heterostructure was analyzed to explain the observed results. It was shown that the photosensitivity properties of the a-Si/c-Si heterostructure depend on the interfacial condition. The perspective application of the structures investigated is IR detector fabrication.
- OSTI ID:
- 417658
- Report Number(s):
- CONF-960401-; ISBN 1-55899-329-0; TRN: IM9705%%31
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Thin films for photovoltaic and related device applications; Ginley, D. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Catalano, A. [ed.] [Technology Assessment Group, Boulder, CO (United States)]; Schock, H.W. [ed.] [Univ. Stuttgart (Germany)]; Eberspacher, C. [ed.] [Unisun, Newbury Park, CA (United States)]; Peterson, T.M. [ed.] [Electric Power Research Inst., Palo Alto, CA (United States)]; Wada, Takahiro [ed.] [Matsushita Electric Industries Co., Ltd., Kyoto (Japan)]; PB: 621 p.; Materials Research Society symposium proceedings, Volume 426
- Country of Publication:
- United States
- Language:
- English
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