Theory of surfaces and interfaces in wide-gap nitrides
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics
A selection of the results of an ongoing theoretical investigation of the properties of the wide-gap 3-5 nitride semiconductors are presented. The energetics of the 2 x 2 reconstructions of GaN surfaces have been studied. The nitrogen-adatom reconstruction on the gallium-terminated face has the lowest energy of the reconstructions considered; on the nitrogen-terminated face, the nitrogen-vacancy has the lowest energy. The electron affinity at selected AlN surfaces has been calculated. Negative electron affinity (NEA) is found for the 2 x 2 aluminum-vacancy reconstruction on the aluminum terminated face, while the 1 x 1 hydrogen-passivated nitrogen-terminated surface has a very small electron affinity. A detailed study of (001) zinc-blende interfaces of AlN/GaN/InN is described. The band offsets show that the interfaces are of type 1. 31 refs., 4 figs., 2 tabs.
- OSTI ID:
- 417635
- Report Number(s):
- CONF-960502-; ISBN 1-56677-163-3; TRN: IM9705%%8
- Resource Relation:
- Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: 1996; Related Information: Is Part Of III-V nitride materials and processes; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Dismukes, J.P. [ed.] [Univ. of Toledo, OH (United States)]; Pearton, S.J. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; PB: 241 p.; Electrochemical Society Proceedings Volume 96-11
- Country of Publication:
- United States
- Language:
- English
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