GUARD RING SEMICONDUCTOR JUNCTION
Patent
·
OSTI ID:4131778
A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-18-004076
- Assignee:
- U. S. Atomic Energy Commission
- Patent Number(s):
- US 3113220
- OSTI ID:
- 4131778
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-64
- Country of Publication:
- United States
- Language:
- English
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