Spectroscopy of defects induced by ohmic contact preparation in LEC GaAs particle detectors

Conference · Sun Dec 01 00:00:00 EST 1996

OSTI ID:405515

Castaldini, A; Cavallini, A ^[1]; Canali, C; Nava, F ^[2]

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1. Univ. of Bologna (Italy)
2. Univ. Modena (Italy); and others

Semi-insulating LEC gallium arsenide particle detectors were realized with differently manufactured ohmic contacts to improve their performances and possibly avoid injection effects often experienced when the detectors work in full depletion conditions. I-V and C-V measurements on Schottky structures were carried out. Photo-induced current transient spectroscopy and also photo-deep level transient spectroscopy investigations, performed on both planar and Schottky structures, identified electron and hole traps. Detector performances were correlated to defects action.

• OSTI ID: 405515
• Report Number(s): CONF-951231-; TRN: 96:005795-0011
• Resource Relation: Conference: 6. conference on defect recognition and image processing in semiconductors, Estes Park, CO (United States), 3-6 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Defect recognition and image processing in semiconductors 1995; Mickelson, A.R. [ed.]; PB: 380 p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
GALLIUM ARSENIDES
ELECTRICAL PROPERTIES
SEMICONDUCTOR DETECTORS
PERFORMANCE
SPECTROSCOPY
CHARGED PARTICLE DETECTION