Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures
Conference
·
OSTI ID:405402
- Texas Instruments Corporate Research & Development, Dallas, TX (United States)
The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.
- OSTI ID:
- 405402
- Report Number(s):
- CONF-951097-; TRN: 96:004544-0043
- Resource Relation:
- Conference: IEEE gallium arsenide integrated circuits symposium: integrated circuits in GaAs, InP, and other compound semiconductors, San Diego, CA (United States), 29 Oct - 1 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of GaAs IC symposium. Technical digest 1995; PB: 349 p.
- Country of Publication:
- United States
- Language:
- English
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