Statistical circuit simulation with measurement-based active device models: Implications for process control and IC manufacturability

Conference · Sun Dec 31 00:00:00 EST 1995

OSTI ID:405396

Root, D E; McGinty, D; Hughes, B ^[1]

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1. Hewlett-Packard Co., Santa Rosa, CA (United States)

This paper presents a new approach to statistical active circuit design which unifies device parametric-based process control and non-parametric circuit simulation. Predictions of circuit sensitivity to process variation and yield-loss of circuits fabricated in two different GaAs IC processes are described. The simulations make use of measurement-based active device models which are not formulated in terms of conventional parametric statistical variables. The technique is implemented in commercially available simulation software (HP MDS).

• OSTI ID: 405396
• Report Number(s): CONF-951097-; TRN: 96:004544-0036
• Resource Relation: Conference: IEEE gallium arsenide integrated circuits symposium: integrated circuits in GaAs, InP, and other compound semiconductors, San Diego, CA (United States), 29 Oct - 1 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of GaAs IC symposium. Technical digest 1995; PB: 349 p.
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
GALLIUM ARSENIDES
PROCESS CONTROL
COMPUTER-AIDED DESIGN
INTEGRATED CIRCUITS
H CODES
COMPUTERIZED SIMULATION