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Title: High-density etching of group III nitride ternary films

Abstract

Due to their wide bandgaps and high dielectric constants, group III nitrides have made significant impact on the compound semiconductor community as blue, green, and ultraviolet light emitting diodes and for their potential use in laser structures and high temperature electronics. Processing of these materials, in particular wet and dry etching, has proven to be extremely difficult due to their inert chemical nature. The authors report electron cyclotron resonance etching of In{sub x}Ga{sub 1{minus}x}N and In{sub 0.75}Al{sub 0.25}N as a function of temperature, RF power, pressure, and microwave power. Etch conditions were characterized for rate, profile, and sidewall and surface morphology and compared to etch data for GaN, InN, and AlN. Atomic force microscopy was used to quantify root-mean-square roughness of the etched surfaces. The authors observed consistent trends for the InAlN films where the etch rates increased with increasing concentration of In. The trends were less consistent for the InGaN etch rates.

Authors:
;  [1]; ; ;  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Univ. of Florida, Gainesville, FL (United States)
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
404670
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 143; Journal Issue: 10; Other Information: PBD: Oct 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM NITRIDES; ETCHING; GALLIUM NITRIDES; ALUMINIUM NITRIDES; SEMICONDUCTOR MATERIALS; LASER MATERIALS; SURFACE PROPERTIES; USES

Citation Formats

Shul, R J, Howard, A J, Pearton, S J, Abernathy, C R, and Vartuli, C B. High-density etching of group III nitride ternary films. United States: N. p., 1996. Web. doi:10.1149/1.1837199.
Shul, R J, Howard, A J, Pearton, S J, Abernathy, C R, & Vartuli, C B. High-density etching of group III nitride ternary films. United States. https://doi.org/10.1149/1.1837199
Shul, R J, Howard, A J, Pearton, S J, Abernathy, C R, and Vartuli, C B. 1996. "High-density etching of group III nitride ternary films". United States. https://doi.org/10.1149/1.1837199.
@article{osti_404670,
title = {High-density etching of group III nitride ternary films},
author = {Shul, R J and Howard, A J and Pearton, S J and Abernathy, C R and Vartuli, C B},
abstractNote = {Due to their wide bandgaps and high dielectric constants, group III nitrides have made significant impact on the compound semiconductor community as blue, green, and ultraviolet light emitting diodes and for their potential use in laser structures and high temperature electronics. Processing of these materials, in particular wet and dry etching, has proven to be extremely difficult due to their inert chemical nature. The authors report electron cyclotron resonance etching of In{sub x}Ga{sub 1{minus}x}N and In{sub 0.75}Al{sub 0.25}N as a function of temperature, RF power, pressure, and microwave power. Etch conditions were characterized for rate, profile, and sidewall and surface morphology and compared to etch data for GaN, InN, and AlN. Atomic force microscopy was used to quantify root-mean-square roughness of the etched surfaces. The authors observed consistent trends for the InAlN films where the etch rates increased with increasing concentration of In. The trends were less consistent for the InGaN etch rates.},
doi = {10.1149/1.1837199},
url = {https://www.osti.gov/biblio/404670}, journal = {Journal of the Electrochemical Society},
number = 10,
volume = 143,
place = {United States},
year = {Tue Oct 01 00:00:00 EDT 1996},
month = {Tue Oct 01 00:00:00 EDT 1996}
}