Electrodeposition of metal adlayers on boron-doped diamond thin-film electrodes
- Utah State Univ., Logan, UT (United States). Dept. of Chemistry and Biochemistry
A preliminary investigation of the electrochemical deposition of Pt, Pb, and Hg adlayers on conductive diamond thin-film surfaces ha been made using cyclic voltammetry and scanning electron microscopy. The diamond thin films employed were polycrystalline, grown on conductive Si substrates (1 cm{sup 2}) to a thickness of ca. 14 {mu}m, and doped with boron at a nominal atomic concentration ranging between 10{sup 19} and 10{sup 20} cm{sup {minus}3}. The cyclic volammetric measurements were performed both in a conventional glass electrochemical cell and in thin-layer flow cell. The results demonstrate that metallization of diamond film surfaces electrochemically is feasible, opening the door of the development of novel catalytic electrodes, sensors, and detectors using this advanced material.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 40299
- Journal Information:
- Journal of the Electrochemical Society, Vol. 142, Issue 3; Other Information: PBD: Mar 1995
- Country of Publication:
- United States
- Language:
- English
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